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  2SC3620 2004-07-26 1 toshiba transistor silicon npn triple diffused type (pct process) 2SC3620 color tv horizontal driver applications color tv chroma output applications ? high breakdown voltage: v ceo = 300 v ? recommended for chroma output and driver applications for line-operated tv horizontal. maximum ratings (tc = 25c) characteristics symbol rating unit collector-base voltage v cbo 300 v collector-emitter voltage v ceo 300 v emitter-base voltage v ebo 7 v collector current i c 100 ma base current i b 50 ma collector power dissipation (ta = 25c) p c 1.5 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c electrical characteristics (tc = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 240 v, i e = 0 D D 1.0 a emitter cut-off current i ebo v eb = 7 v, i c = 0 D D 1.0 a h fe (1) v ce = 10 v, i c = 50 ma 40 D 170 dc current gain h fe (2) v ce = 10 v, i c = 100 ma 20 D D collector-emitter saturation voltage v ce (sat) i c = 100 ma, i b = 20 ma D D 1.0 v base-emitter saturation voltage v be (sat) i c = 100 ma, i b = 20 ma D D 1.2 v transition frequency f t v ce = 10 v, i c = 30 ma 50 D D mhz collector output capacitance c ob v cb = 50 v, i e = 0, f = 1 mhz D D 5.0 pf marking unit: mm jedec D jeita D toshiba 2-8h1a weight: 0.82 g (typ.) c3620 part no. (or abbreviation code) lot no. a line indicates lead (pb)-free package or lead (pb)-free finish.
2SC3620 2004-07-26 2 collector current i c (ma) th t collector current i c (ma) collector-emitter saturation voltage v ce (sat) (v) collector-emitter voltage v ce (v) collector current i c (ma) collector current i c (ma) dc current gain h fe collector current i c (ma) collector-emitter saturation voltage v ce (sat) (v) dc current gain h fe collector current i c (ma) base-emitter saturation voltage v be (sat) (v) i c ? v ce v ce (sat) ? i c v be (sat) ? i c h fe ? i c h fe ? i c v ce (sat) ? i c common emitter i c /i b = 10 1 0.3 3 10 30 3 0.05 0.1 0.3 0.5 100 tc = 100c 25 ? 25 1 30 common emitter i c /i b = 10 tc = 2 5 c 5 0.3 3 0.5 0.3 0.1 1 3 10 100 1 5 30 common emitter tc = 25c 500 0.3 300 50 30 10 1 3 10 100 v ce = 10 v 2 100 common emitter tc = 2 5 c 1 0.3 3 10 30 3 0.05 0.1 0.3 0.5 100 i c /i b = 20 5 10 1 100 0 0 60 40 20 4 8 12 common emitter tc = 25c 0.6 0.5 i b = 0.1 ma 0.7 16 0.4 0.2 0.3 20 24 28 80 0.9 0.8 1.0 25 30 common emitter v ce = 10 v 500 0.3 300 50 30 10 1 3 10 100 tc = 100c ? 25 100
2SC3620 2004-07-26 3 collector-base voltage v cb (v) collector output capacitance c ob (pf) collector current i c (ma) safe operating area collector-emitter voltage v ce (v) f t ? i c c ob ? v cb transition frequency f t (mhz) base-emitter voltage v be (v) i c ? v be collector current i c (ma) collector current i c (ma) 100 i e = 0 f = 1 mhz tc = 2 5 c 50 1 30 5 3 1 3 10 30 300 10 10 ? 30 common emitter tc = 2 5 c 500 ? 0.3 300 50 30 10 ? 1 ? 3 ? 10 ? 100 v ce = 20 v 5 100 100 0 0 80 20 0.2 0.4 0.6 common emitter v ce = 10 v 25 0.8 tc = 100c 60 40 1.0 ? 25 *: single nonrepetitive pulse tc = 2 5 c curves must be derated linearly with increase in temperature. 1 2 3 5 30 50 100 500 30 100 i c max (continuous) i c max (pulsed)* 1 ms* 10 ms* 100 ms* dc operation ta = 25c 10 300 v ceo (max) 500 ms* 3 10 300
2SC3620 2004-07-26 4 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use


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